參數(shù)資料
型號(hào)： STU10NA50
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode Fast Power MOS Transistors(N溝道增強(qiáng)模式快速功率MOS晶體管)
中文描述： N溝道增強(qiáng)模式快速功率MOS晶體管（不適用溝道增強(qiáng)模式快速功率馬鞍山晶體管）
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 72K
代理商： STU10NA50
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
I
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.86
30
0.1
300
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
10.2
A
E
AS
520
mJ
E
AR
24
mJ
I
AR
6.8
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A V
GS
= 0
500
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 T
c
= 100
o
C
250
1000
±
100
μ
A
μ
A
nA
I
GSS
V
GS
=
±
30 V
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
2.25
3
3.75
V
R
DS(on)
V
GS
= 10 V I
D
= 5 A
V
GS
= 10 V I
D
= 5 A T
c
= 100
o
C
0.5
0.6
1.2
A
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
10.2
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 5 A
6
9
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
1750
250
80
2500
370
130
pF
pF
pF
STU10NA50
2/5
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