參數(shù)資料
型號： STT1NF100
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 100V - 0.7ohm - 1A SOT23-6L STripFET⑩ II POWER MOSFET
中文描述： N溝道100V的- 0.7ohm - 1A條采用SOT23 - 6L STripFET⑩二功率MOSFET
文件頁數(shù)： 3/6頁
文件大?。?/td> 97K
代理商： STT1NF100
3/6
STT1NF100
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 50V, I
D
= 0.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 1)
V
DD
= 50V, I
D
= 1A,
V
GS
= 10V
(see test circuit, Figure 2)
Min.
Typ.
Max.
Unit
4
ns
t
r
Rise Time
5.5
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
4
1
1.5
6
nC
nC
nC
Parameter
Test Conditions
V
DD
= 50V, I
D
= 0.5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 1)
Min.
Typ.
13
6.5
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
1
A
Source-drain Current (pulsed)
4
A
Forward On Voltage
I
SD
= 1A, V
GS
= 0
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 1A, di/dt = 100A/μs,
V
DD
= 20V, T
j
= 150°C
(see test circuit, Figure 3)
45
60
2.7
ns
nC
A
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