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參數(shù)資料
| 型號： | STS8C5H30L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | LOW GATE CHARGE StripFET III MOSFET |
| 中文描述： | 低柵極電荷StripFET三MOSFET的 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 442K |
| 代理商： | STS8C5H30L |
STS8C5H30L
2/11
Table 3: Absolute Maximum ratings
Symbol
( )
Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Table 4: Thermal Data
Rthj-case
Thermal Resistance Junction-case Single Operating
Dual Operating
T
l
Maximum Lead Temperature For Soldering Purpose
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125°C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 16V
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
Table 6: Dynamic
Symbol
g
fs
(1)
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Parameter
Value
Unit
N-CHANNEL
P-CHANNEL
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
30
V
30
V
Gate- source Voltage
± 16
± 16
V
Drain Current (continuous) at T
C
= 25°C
Single Operating
Drain Current (continuous) at T
C
= 100°C
Single Operating
8
4.2
A
I
D
6.4
3.1
A
I
DM
( )
P
TOT
Drain Current (pulsed)
32
16.8
A
Total Dissipation at T
C
= 25°C Dual Operating
Total Dissipation at T
C
= 25°C Single Operating
1.6
2
W
W
T
j
T
stg
Operating Junction Temperature
Storage Temperature
150
-55 to 150
°C
°C
62.5
78
300
°C/W
°C/W
°C
Min.
30
30
Typ.
Max.
Unit
V
I
D
= 250 μA, V
GS
= 0
n-ch
p-ch
V
DS
= Max Rating
n-ch
p-ch
1
10
μA
μA
V
GS
= ± 16V
n-ch
p-ch
±100
±100
nA
nA
n-ch
p-ch
1
1
1.6
0.018
0.045
0.020
0.070
2.5
0.022
0.055
0.025
0.075
V
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 4.5 V, I
D
= 4 A
V
GS
= 4.5 V, I
D
= 2.5 A
n-ch
p-ch
n-ch
p-ch
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 4 A
V
DS
= 15 V
,
I
D
= 2.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
8.5
10
Max.
Unit
S
S
Forward
Transconductance
n-ch
p-ch
C
iss
Input Capacitance
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
857
1350
147
490
20
130
pF
pF
pF
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer
Capacitance
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