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參數(shù)資料
| 型號： | STS8C5H30L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | LOW GATE CHARGE StripFET III MOSFET |
| 中文描述： | 低柵極電荷StripFET三MOSFET的 |
| 文件頁數(shù)： | 11/11頁 |
| 文件大小： | 442K |
| 代理商： | STS8C5H30L |
11/11
STS8C5H30L
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PDF描述 |
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| STS8NFS30L | N - CHANNEL 30V - 0.018ohm - 8A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER |
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| STSJ20NM20N | N-CHANNEL 200V 0.11 OHM 20A POWERSO-8 ULTRA LOW GATE CHARGE MDMESH II MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STS8C5H30L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.018 ohm - 8A/P-channel 30V - 0.045 ohm - 5A - SO-8 Low gate charge STripFET III MOSFET |
| STS8C5H30L_0707 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET? III MOSFET |
| STS8DN3LLH5 | 功能描述:MOSFET Dual N-Ch 30V 10A STripFET V Pwr RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS8DN6LF6AG | 功能描述:MOSFET 2 N-CHANNEL 60V 8A 8SO 制造商:stmicroelectronics 系列:STripFET?? 包裝:剪切帶（CT） 零件狀態(tài):在售 FET 類型:2 個 N 溝道（雙） FET 功能:邏輯電平門 漏源電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:24 毫歐 @ 4A，10V 不同 Id 時的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:27nC @ 10V 不同 Vds 時的輸入電容（Ciss）（最大值）:1340pF @ 25V 功率 - 最大值:3.2W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| STS8DNF30L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
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