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參數(shù)資料
| 型號： | STS3DPFS30L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER |
| 中文描述： | P -通道30V的- 0.13ohm -第3A的S0 - 8 STripFET肖特基整流器MOSFET的普樂士 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 72K |
| 代理商： | STS3DPFS30L |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V I
D
= 1.5 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, see fig. 3)
V
DD
= 15 V I
D
= 3 A V
GS
= 4.5 V
15
37
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
5.5
1.7
1.8
7.5
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
r
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
D
= 1.5 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, see fig. 3)
15
29
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain
(pulsed)
Forward On Voltage
Current
3
12
A
A
V
SD
(
)
t
rr
I
SD
= 3 A V
GS
= 0
I
SD
= 3 A di/dt = 100 A/
μ
s
V
DD
= 15V T
j
= 150
o
C
(see test circuit, figure 5)
2
V
Q
rr
I
RRM
Reverse
Time
Reverse
Charge
Reverse
Current
Recovery
Recovery
Recovery
18
12
1.33
ns
nC
Α
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
R
(
)
Reversed
Current
Leakage
T
J
= 25
o
C V
R
=30V
T
J
= 125
o
C V
R
=30V
T
J
= 25
o
C I
F
=3A
T
J
= 125
o
C I
F
=3A
0.03
0.2
100
mA
mA
V
F
(
)
Forward Voltage drop
0.38
0.51
0.46
V
V
STS3DPFS30L
3/5
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