參數(shù)資料
型號: STS1HNC60
廠商: 意法半導體
英文描述: N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET
中文描述: N溝道600V的- 7ohm - 0.4A的SO - 8 MOSFET的第二PowerMesh⑩
文件頁數(shù): 2/6頁
文件大?。?/td> 137K
代理商: STS1HNC60
STS1HNC60
2/6
THERMAL DATA
Rthj-case
Rthj-amb
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
35.7
60
300
°C/W
°C/W
°C
Parameter
Max Value
0.4
Unit
A
100
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ± 30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10V, I
D
= 0.3 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
7
8
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.3 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
1.25
Max.
Unit
S
g
fs
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
160
pF
Output Capacitance
26
pF
Reverse Transfer
Capacitance
3.8
pF
相關PDF資料
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STS1NC60 N-CHANNEL 600V - 12ohm - 0.3A - SO-8 PowerMESH⑩II MOSFET
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