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參數(shù)資料
| 型號： | STS12NH3LL |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET |
| 中文描述： | N溝道30五- 0.008з - 12的SO - 8超低柵極電荷STripFET⑩MOSFET的 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 178K |
| 代理商： | STS12NH3LL |
3/7
STS12NH3LL
ELECTRICAL CHARACTERISTICS
(CONTINUED)
Table 7: Switching On
Symbol
Parameter
t
d(on)
Turn-on Delay Time
t
r
Rise Time
Table 8: Switching Off
Symbol
t
d(off)
t
f
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
= 15 V, I
D
= 6 A
R
G
= 4.7
,
V
GS
= 4.5V
(see Figure 3)
V
DD
= 15V, I
D
= 12 A, V
GS
= 4.5 V
(see Figure 5)
15
ns
32
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
9
3.7
3
12
nC
nC
nC
Parameter
Test Conditions
V
DD
= 15 V, I
D
= 6 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see Figure 3)
Min.
Typ.
18
8.5
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
12
48
Unit
A
A
Source-drain Current
I
SD
= 12 A, V
GS
= 0
I
SD
= 12 A, di/dt = 100 A/μs
V
DD
= 20V, T
j
= 150°C
(see Figure 4)
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
24
17.4
1.45
ns
nC
A
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| STS12NH3LL_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET |
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