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參數(shù)資料
| 型號(hào)： | STS12NH3LL |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET |
| 中文描述： | N溝道30五- 0.008з - 12的SO - 8超低柵極電荷STripFET⑩MOSFET的 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 178K |
| 代理商： | STS12NH3LL |
STS12NH3LL
2/7
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate-source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-amb (#)
(
#
) When Mounted on 1 inch2 FR-4 board, 2 oz Cu (t
≤
10 sec.)
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On /Off
Symbol
Parameter
V
(BR)DSS
Drain-source Breakdown
Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125°C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 4.5 V, I
D
= 6 A
Table 6: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Value
Unit
30
V
30
V
± 16
V
12
A
7.5
A
48
A
2.5
W
– 55 to 150
°C
Thermal Resistance Junction-ambient
50
°C/W
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
30
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 16 V
± 100
nA
1
V
V
GS
= 10 V, I
D
= 6 A
0.008
0.010
0.0105
0.013
Parameter
Test Conditions
V
DS
= 15V, I
D
= 6 A
V
DS
= 25V, f= 1 MHz, V
GS
= 0
Min.
Typ.
TBD
Max.
Unit
S
Forward Transconductance
Input Capacitance
965
pF
Output Capacitance
285
pF
Reverse Transfer
Capacitance
38
pF
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| STS12NH3LL_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET |
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