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參數(shù)資料
| 型號： | STQ1NE10L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道100V的- 0.3歐姆- 1A至- 92 STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 311K |
| 代理商： | STQ1NE10L |
9/9
STQ1NE10L
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STQ1NE10L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.3ヘ - 1A - TO-92 STripFET⑩ Power MOSFET |
| STQ1NE10L-AP | 制造商:STMicroelectronics 功能描述:STQ1NE10L Series N-Channel 100 V 0.4 Ohm STripFET Power MOSFET - TO-92 |
| STQ1NK60ZR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STQ1NK60ZR-AP | 功能描述:MOSFET N-CH 600V 0.3A TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SuperMESH™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| STQ1NK60ZR-AP_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH? Power MOSFET |
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