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參數(shù)資料
| 型號(hào)： | STQ1NC60R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH⑩II Power MOSFET |
| 中文描述： | N溝道600V的- 12ohm - 0.3A至92 PowerMESH⑩二功率MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 426K |
| 代理商： | STQ1NC60R |
3/9
STQ1NC60R
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
Parameter
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 0.3 A
C
iss
C
oss
C
rss
Reverse Transfer
Capacitance
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
Min.
Typ.
0.87
Max.
Unit
S
Input Capacitance
Output Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
108
18
2.5
pF
pF
pF
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 0.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 1 A,
V
GS
= 10V, R
G
= 4.7
Min.
Typ.
7.2
8
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
7.3
3.4
2.5
10
nC
nC
nC
Parameter
Test Conditions
V
DD
= 480V, I
D
= 1 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
Max.
Unit
ns
ns
ns
Off-voltage Rise Time
Fall Time
Cross-over Time
33
11
43
Parameter
Test Conditions
Min.
Typ.
Max.
0.3
1.2
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 0.3 A, V
GS
= 0
I
SD
= 1 A, di/dt = 100A/μs
V
DD
= 25 V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
450
720
3.2
ns
μ
C
A
Thermal Impedance
Safe Operating Area
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