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參數(shù)資料
| 型號： | STQ1NC60R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH⑩II Power MOSFET |
| 中文描述： | N溝道600V的- 12ohm - 0.3A至92 PowerMESH⑩二功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 426K |
| 代理商： | STQ1NC60R |
STQ1NC60R
2/9
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
0.3A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
R
DS(on)
Static Drain-source On
Resistance
Parameter
Value
Unit
600
V
600
V
± 30
V
0.3
A
0.19
A
1.2
A
3.1
W
0.025
3
W/°C
V/ns
Operating Junction Temperature
-65 to 150
-65 to 150
°C
°C
TO-92
120
40
260
Rthj-amb
Rthj-lead
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
°C/W
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
0.3
Unit
A
60
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 30V
±100
nA
2
3
4
V
V
GS
= 10V, I
D
= 0.3 A
12
15
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| STQ1NC60R-AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 300MA I(D) | TO-92VAR |
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