- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382559 > STP9NK80Z (意法半導(dǎo)體) N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | STP9NK80Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道800V的，0.9ohm - 7.5A的TO-220/TO-220FP齊納MOSFET的保護(hù)SuperMESH |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 336K |
| 代理商： | STP9NK80Z |
3/11
STP9NK80Z - STF9NK80Z
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100μA
R
DS(on)
Static Drain-source On
Resistance
Table 8: DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
800
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 3.75 A
0.9
1.2
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 3.75 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
7.5
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
1900
180
38
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 640V
75
pF
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400 V, I
D
= 3.75 A
R
G
= 4.7
V
GS
= 10 V
(see Figure 19)
26
19
58
18
ns
ns
ns
ns
t
r(Voff)
t
f
t
c
Q
g
Q
gs
Q
gd
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V, I
D
= 7.5A,
R
G
= 4.7
,
V
GS
= 10V
(see Figure 20)
12
10
24
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 640V, I
D
= 7.5 A,
V
GS
= 10V
(see Figure 22)
60
12
35
84
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
7.5
30
Unit
A
A
Source-drain Current
I
SD
= 7.5 A, V
GS
= 0
I
SD
= 7.5 A, di/dt = 100A/μs
V
DD
= 35V, T
j
= 25
°
C
(see Figure 20)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
530
4.5
17
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 7.5 A, di/dt = 100A/μs
V
DD
= 35V, T
j
= 150
°
C
(see Figure 20)
690
6.4
17
ns
μC
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STG3680 | Heat Sink; Package/Case:TO-220; Thermal Resistance:4.5 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:50.8mm; Width:41.91mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:No RoHS Compliant: No |
| STG3680QTR | Heat Sink; Package/Case:TO-220; Thermal Resistance:4.5 C/W; Mounting Type:Through Hole; Length:50.8mm; Height:50.8mm; Width:41.91mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STG3684QTR | LOW VOLTAGE 0.5? MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE |
| STG3685 | LOW VOLTAGE 0.5? MAX DUAL SPDT SWITCH, SINGLE ENABLE WITH BREAK BEFORE MAKE FEATURE |
| STG3685BJR | LOW VOLTAGE 0.5? MAX DUAL SPDT SWITCH, SINGLE ENABLE WITH BREAK BEFORE MAKE FEATURE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP9NK90Z | 功能描述:MOSFET N-Ch 900 Volt 8.0 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP9NK90Z | 制造商:STMicroelectronics 功能描述:MOSFET 制造商:STMicroelectronics 功能描述:N CHANNEL MOSFET, 900V, 8A, TO-220 |
| STP9NM40N | 制造商:STMicroelectronics 功能描述:Trans MOSFET N-CH 400V 5.6A 3-Pin(3+Tab) TO-220AB Tube 制造商:STMicroelectronics 功能描述:POWER MOSFET - Rail/Tube 制造商:STMicroelectronics 功能描述:MOSF N CH 400V 5.6A TO220 制造商:STMicroelectronics 功能描述:N-Ch 400 V 0.73 Ohm 5.6 A Mdmesh I |
| STP9NM50N | 功能描述:MOSFET N Ch 500V 0.47 Ohm 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP9NM60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。