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參數(shù)資料
| 型號： | STP9NK80Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道800V的，0.9ohm - 7.5A的TO-220/TO-220FP齊納MOSFET的保護SuperMESH |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 336K |
| 代理商： | STP9NK80Z |
STP9NK80Z - STF9NK80Z
2/11
Table 3: Absolute Maximum ratings
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
7.5A, di/dt
≤
200A/μs, V
DD
=
80% V
(BR)DSS
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source
Breakdown Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
TO-220
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
Drain Current (pulsed)
7.5
7.5 (*)
A
4.7
4.7 (*)
A
30
30 (*)
A
Total Dissipation at T
C
= 25
°
C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
150
35
W
1.20
0.28
W/
°
C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°
C
°
C
TO-220
0.83
TO-220FP
3.6
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
°
C/W
°
C/W
°
C
62.5
350
Parameter
Max Value
7.5
Unit
A
350
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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