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參數(shù)資料
| 型號(hào)： | STP60NE10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET |
| 中文描述： | ? - 100V的通道- 0.016W -第60A條TO-220/TO-220FP STripFET]功率MOSFET |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | STP60NE10 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 80 V I
D
= 60 A V
GS
= 10 V
I
D
= 30 A
V
GS
= 10 V
28
100
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
142
27
59
185
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
clamp
= 80 V
R
G
=
4.7
(Inductive Load, see fig. 5)
I
D
= 30 A
V
GS
= 10 V
160
45
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
I
D
= 60 A
V
GS
= 10 V
40
45
85
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
60
240
A
A
V
SD
(
)
t
rr
I
SD
= 60 A
I
SD
= 60 A
V
DD
= 50 V
(see test circuit, fig. 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
170
1.02
12
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for TO-220
SafeOperating Area for TO-220FP
STP60NE10/FP
3/9
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PDF描述 |
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| STP60N05-16 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 60A I(D) | TO-220 |
| STP60N05FI | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 32A I(D) | TO-220VAR |
| STP60N06 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-220 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP60NE10FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET |
| STP60NF03L | 功能描述:MOSFET N-Ch 30 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP60NF03L | 制造商:STMicroelectronics 功能描述:MOSFET N LOGIC TO-220 |
| STP60NF03L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.008Ω - 60A TO-220 STripFET? Power MOSFET |
| STP60NF06 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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