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參數(shù)資料
| 型號： | STP40N20 |
| 廠商： | 意法半導體 |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 348K |
| 代理商： | STP40N20 |
13/13
STB40N20 - STP40N20 - STW40N20
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相關代理商/技術參數(shù) |
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| STP40N60M2 | 制造商:STMicroelectronics 功能描述:N-CHANNEL 600 V, 0.078 OHM TYP., 34 A MDMESH II PLUS(TM) LOW - Rail/Tube 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 34A TO220 制造商:STMicroelectronics 功能描述:600V,0.078 Ohm, 34A, MDmesh II Plus,N-CHL,TO-220. 制造商:STMicroelectronics 功能描述:Single N-Channel 650 V 0.088 Ohm 250 W Through Hole Power Mosfet - TO-220-3 制造商:STMicroelectronics 功能描述:N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
| STP40N65M2 | 功能描述:MOSFET N-CH 650V 32A TO220 制造商:stmicroelectronics 系列:MDmesh? M2 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:650V 電流 - 連續(xù)漏極（Id）（25°C 時）:32A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:99 毫歐 @ 16A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:56.5nC @ 10V 不同 Vds 時的輸入電容（Ciss）:2355pF @ 100V 功率 - 最大值:250W 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應商器件封裝:TO-220 標準包裝:50 |
| STP40NE03L-20 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET |
| STP40NF03L | 功能描述:MOSFET N-Ch 30 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP40NF03L | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
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