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參數(shù)資料
| 型號： | STP3NC50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET |
| 中文描述： | N溝道500V - 3ohm - 2.8A至二220 PowerMesh⑩MOSFET的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 238K |
| 代理商： | STP3NC50 |
3/8
STP3NC50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 250V, I
D
= 1.4 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 2.8 A,
V
GS
= 10V
Min.
Typ.
10
10
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
10
2.5
4.5
13.5
nC
nC
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 2.8 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
Fall Time
Cross-over Time
10
8
20
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
2.8
A
Source-drain Current (pulsed)
11.2
A
Forward On Voltage
I
SD
= 2.8 A, V
GS
= 0
I
SD
= 2.8A, di/dt = 100A/μs,
V
DD
= 100V, Tj = 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
380
ns
Reverse Recovery Charge
2200
nC
Reverse Recovery Current
11.5
A
Safe Operating Area
Thermal Impedence
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| STP3NC70ZFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET |
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