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參數(shù)資料
| 型號： | STP3NC50 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET |
| 中文描述： | N溝道500V - 3ohm - 2.8A至二220 PowerMesh⑩MOSFET的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 238K |
| 代理商： | STP3NC50 |
STP3NC50
2/8
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.67
62.5
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
2.8
Unit
A
110
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
500
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 1.4 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
3
4
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 1.4A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
2
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
Input Capacitance
260
pF
Output Capacitance
45
pF
C
rss
Reverse Transfer
Capacitance
5
pF
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| STP3NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET |
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| STP3NC70ZFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET |
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