參數(shù)資料
型號(hào)： STP30NE03L
廠(chǎng)商： 意法半導(dǎo)體
英文描述： Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:47uF; Capacitance Tolerance:+/- 20%; ESR:500mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述： ? -通道30V的- 0.028歐姆- 30A條TO-220/TO-220FP STripFET功率MOSFET
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 105K
代理商： STP30NE03L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 48 V I
D
= 30 A V
GS
= 5 V
I
D
= 14 A
V
GS
= 5 V
19
110
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
20
8
10
28
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 24 V
R
G
= 4.7
(Inductive Load, see fig. 5)
I
D
= 14 A
V
GS
= 5 V
40
20
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
I
D
= 28 A
V
GS
= 5 V
20
38
65
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
30
120
A
A
V
SD
(
)
t
rr
I
SD
= 30 A
I
SD
= 28 A
V
DD
= 20 V
(see test circuit, fig. 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
30
30
2
ns
nC
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for TO-220
SafeOperating Area for TO-220FP
STP30NE03L/FP
3/9
相關(guān)PDF資料
PDF描述
STP30NE03LFP Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:150mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
STP30NS15LFP N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH OVERLAY⑩ POWER MOSFET
STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3NA100FI N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOS晶體管)
STP3NA100 N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOS晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP30NE03LFP 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET
STP30NE06 功能描述:MOSFET RO 511-STP36NF06 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP30NE06FP 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
STP30NE06L 功能描述:MOSFET N-Ch 60 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP30NE06LFP 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
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