參數(shù)資料
型號： STP30NE03L
廠商： 意法半導(dǎo)體
英文描述： Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:47uF; Capacitance Tolerance:+/- 20%; ESR:500mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述： ? -通道30V的- 0.028歐姆- 30A條TO-220/TO-220FP STripFET功率MOSFET
文件頁數(shù)： 2/9頁
文件大?。?/td> 105K
代理商： STP30NE03L
THERMAL DATA
TO-220
TO-220FP
R
thj-case
Thermal Resistance Junction-case
Max
2.14
6
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
15
A
E
AS
250
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A
V
GS
= 0
30
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
T
c
= 125
o
C
1
10
μ
A
μ
A
nA
I
GSS
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
I
D
= 250
μ
A
I
D
= 15 A
I
D
= 15 A
1
1.75
2.5
V
V
GS
= 5 V
V
GS
= 10 V
0.042
0.028
0.055
0.04
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
30
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=15 A
5
15
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
800
205
70
pF
pF
pF
STP30NE03L/FP
2/9
相關(guān)PDF資料
PDF描述
STP30NE03LFP Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:150mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
STP30NS15LFP N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH OVERLAY⑩ POWER MOSFET
STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3NA100FI N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOS晶體管)
STP3NA100 N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOS晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP30NE03LFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET
STP30NE06 功能描述:MOSFET RO 511-STP36NF06 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP30NE06FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
STP30NE06L 功能描述:MOSFET N-Ch 60 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP30NE06LFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
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