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參數(shù)資料
| 型號： | STP2HNC60FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 4Ω - 2.2a在TO-220/TO-220FP PowerMesh第二MOSFET的⑩ |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 328K |
| 代理商： | STP2HNC60FP |
3/9
STP2HNC60/STP2HNC60FP
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 300V, I
D
= 1 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 480V, I
D
= 2 A,
V
GS
= 10V
Min.
Typ.
9
8.5
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
11.3
2.8
5
15.5
nC
nC
nC
Parameter
Test Conditions
V
DD
= 480V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
Fall Time
Cross-over Time
18
9
27
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
2.2
A
Source-drain Current (pulsed)
8.8
A
Forward On Voltage
I
SD
= 2.2 A, V
GS
= 0
I
SD
= 2A, di/dt = 100A/μs,
V
DD
= 100V, Tj = 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
480
ns
Reverse Recovery Charge
1032
nC
Reverse Recovery Current
4.3
A
Safe Operating Area For TO-220FP
Safe Operating Area
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