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參數(shù)資料
| 型號： | STP11NM60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 0.4ohm - 11A條TO-220/TO-220FP/D2PAK/I2PAK的MDmesh⑩功率MOSFET |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 564K |
| 代理商： | STP11NM60 |
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
2/12
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
TO-220/D
2
PAK/I
2
PAK
0.78
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
3.57
°C/W
°C/W
62.5
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
5.5
Unit
A
350
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 5.5A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
0.4
0.45
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 5.5A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
5.2
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
1000
pF
Output Capacitance
230
pF
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
25
pF
C
oss eq.
(2)
V
GS
= 0V, V
DS
= 0V to 480V
100
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP11NM60_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET |
| STP11NM60A | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60AFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET |
| STP11NM60FD | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60FDFP | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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