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參數(shù)資料
| 型號(hào)： | STP11NM60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 0.4ohm - 11A條TO-220/TO-220FP/D2PAK/I2PAK的MDmesh⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 564K |
| 代理商： | STP11NM60 |
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
12/12
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP11NM60_07 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET |
| STP11NM60A | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60AFP | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET |
| STP11NM60FD | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60FDFP | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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