- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385875 > STK3NA50 (意法半導(dǎo)體) N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | STK3NA50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 180K |
| 代理商： | STK3NA50 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.5
80
0.7
275
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
2.7
A
E
AS
40
mJ
E
AR
2
mJ
I
AR
1.7
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
500
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
30 V
T
c
= 125
o
C
25
250
±
100
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 1.5 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
2.4
3
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
3.3
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.5 A
1.2
2.2
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
370
62
20
485
81
27
pF
pF
pF
STK3NA50
2/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STL39002Z | 0.5mm Pitch DIL Vertical SMT Female Assembly, 1.35mm height, gold, 8+8-way, Tape & Reel packing |
| STL51004A | 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power |
| STL51004G | 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power |
| STL51004X | 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power |
| STL51005A | 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STK3NA50K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.7A I(D) | SOT-194 |
| STK3NA60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| ST-K4 | 制造商:SYNERGY 制造商全稱:SYNERGY MICROWAVE CORPORATION 功能描述:TRRANSSFFORRMEERRS |
| STK400-010 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Features of the IMST Hybird ICs |
| STK400-010SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triple Audio Amplifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。