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參數(shù)資料
| 型號： | STH7NA80 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強型功率MOS器件 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 122K |
| 代理商： | STH7NA80 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 400 V
R
G
= 47
(see test circuit, figure 3)
V
DD
= 640 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 640 V
I
D
= 3.5 A
V
GS
= 10 V
3.5
9.5
45
125
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 7 A
V
GS
= 10 V
170
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 7 A
V
GS
= 10 V
58
8
27
78
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 6 A
V
GS
= 10 V
90
25
125
120
35
165
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
6.5
26
A
A
V
SD
(
)
t
rr
I
SD
= 7 A
I
SD
= 7 A
V
DD
= 100 V
(see test circuit, figure 5)
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
850
15
35
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for TO-247
SafeOperating Area for ISOWATT218
STW7NA80-STH7NA80FI
3/10
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PDF描述 |
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| STH8NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STW8NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH8NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH8NA80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8NA80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STH7NA80FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH7NA90FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
| STH-8 | 制造商:Speco Technologies 功能描述: |
| STH80N05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-218 |
| STH80N05FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 52A I(D) | TO-218VAR |
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