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參數(shù)資料
| 型號(hào)： | STH7NA80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 122K |
| 代理商： | STH7NA80 |
THERMAL DATA
TO-247
ISOWATT218
R
thj-case
Thermal Resistance Junction-case
Max
0.83
2.08
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
6.3
A
E
AS
320
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A
V
GS
= 0
800
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
30 V
T
c
= 100
o
C
25
50
μ
A
μ
A
nA
I
GSS
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
I
D
= 250
μ
A
I
D
= 3.5 A
2.25
3
3.75
V
V
GS
= 10V
1.68
1.9
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
7
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3.5 A
4.5
6.3
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1330
160
40
1750
210
55
pF
pF
pF
STW7NA80-STH7NA80FI
2/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STH8NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STW8NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH8NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH8NA80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8NA80 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STH7NA80FI | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH7NA90FI | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
| STH-8 | 制造商:Speco Technologies 功能描述: |
| STH80N05 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-218 |
| STH80N05FI | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 52A I(D) | TO-218VAR |
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