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參數(shù)資料
| 型號： | STH12NA60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| 中文描述： | ? -快速通道增強型功率MOS器件 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 243K |
| 代理商： | STH12NA60 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
R
G
= 4.7
(see test circuit, figure 3)
V
DD
= 480 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 480 V
I
D
= 6 A
V
GS
= 10 V
25
35
35
50
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 12 A
V
GS
= 10 V
190
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 12 A
V
GS
= 10 V
110
15
47
150
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
R
G
= 4.7
(see test circuit, figure 5)
I
D
= 12 A
V
GS
= 10 V
35
20
57
50
30
80
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
12
48
A
A
V
SD
(
)
t
rr
I
SD
= 12 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 12 A
V
DD
= 100 V
(see test circuit, figure 5)
670
12.7
38
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Areas For TO-218 and TO-247
Safe Operating Areas For ISOWATT218
STH12NA60/FI - STW12NA60
3/11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STH12NA60FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH13009 | 功能描述:兩極晶體管 - BJT HI VT FS SWCH PW TRN NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| STH13090 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | TO-218AC |
| STH13091 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 15A I(C) | TO-218AC |
| STH130N10F3-2 | 功能描述:MOSFET N-Ch 100V 7.8 mOhm 120 A STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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