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參數(shù)資料
| 型號(hào)： | STGW20NB60K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH⑩ IGBT |
| 中文描述： | N溝道20A條- 600V的-到247短路IGBT的證明PowerMESH⑩ |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 279K |
| 代理商： | STGW20NB60K |
STGW20NB60K
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGW20NB60KD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20NC60V | 功能描述:IGBT 晶體管 N-Ch 600 Volt 30 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20NC60VD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 30 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20V60DF | 功能描述:IGBT 晶體管 600V 20A High Speed Trench Gate IGBT RoHS:否 制造商:STMicroelectronics 配置:Single 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:+/- 20 V 在25 C的連續(xù)集電極電流:40 A 柵極—射極漏泄電流:250 nA 功率耗散:167 W 最大工作溫度:+ 175 C 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20V60F | 制造商:STMicroelectronics 功能描述:IGBT & POWER BIPOLAR - Rail/Tube |
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