參數(shù)資料
型號(hào): STGP7NB60K
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT
中文描述: N溝道第7A - 600V的- IGBT的TO-220/FP/DPAK/D2PAK PowerMESH⑩
文件頁(yè)數(shù): 4/14頁(yè)
文件大?。?/td> 710K
代理商: STGP7NB60K
STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
4/14
Transfer Characteristics
Output Characteristics
Transconductance
Gate Threshold vs Temperature
Collector-Emitter On Voltage vs Collector Current
相關(guān)PDF資料
PDF描述
STGD7NB60St4 N-CHANNEL 7A - 600V DPAK Power MESH IGBT
STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT
STGP12NB60K SHORT CIRCUIT PROOF PowerMESH IGBT
STGP7NB60HDFP N-Channel 7A-600V- TO-220/FP PowerMESH IGBT(N溝道絕緣柵雙極晶體管)
STGW40NC60V N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH⑩ IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGP7NB60K_07 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT
STGP7NB60KD 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP7NB60KDFP 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT
STGP7NB60KFP 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT
STGP7NB60M 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-CHANNEL 7A - 600V TO-220/DPAK POWERMESH IGBT