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參數(shù)資料
| 型號(hào)： | STGP7NB60K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道第7A - 600V的- IGBT的TO-220/FP/DPAK/D2PAK PowerMESH⑩ |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大小： | 710K |
| 代理商： | STGP7NB60K |
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STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
SWITCHING PARAMETERS
Symbol
g
fs
Forward Transconductance
C
ies
C
oes
C
res
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
Gate-Collector Charge
tscw
Short Circuit Withstand Time
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol
Parameter
V
f
Forward On-Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Parameter
Test Conditions
V
CE
= 25V, Ic = 7 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
Max.
Unit
S
Input Capacitance
Output Capacitance
495
77
13
pF
pF
pF
Total Gate Charge
Gate-Emitter Charge
V
CE
= 480V, I
C
= 7 A,
V
GE
= 15V
32.7
5.9
18.3
45
nC
nC
nC
V
ce
= 0.5 V
BR(CES)
, V
GE
=15V
,
Tc = 125°C , R
G
= 10
V
CC
= 480 V, I
C
= 7 A
R
G
= 10
, V
GE
= 15 V
V
CC
= 480 V, I
C
= 7 A R
G
=10
V
GE
= 15 V,Tc = 125°C
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 10
, V
GE
= 15 V
Tc = 25 °C
10
μs
t
d(on)
t
r
Turn-on Delay Time
Rise Time
15
6
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
980
94
A/μs
μJ
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
85
20
75
100
85
235
ns
ns
ns
ns
μ
J
μ
J
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 10
, V
GE
= 15 V
Tc = 125 °C
150
50
110
150
220
314
ns
ns
ns
ns
μ
J
μ
J
Test Conditions
I
f
= 3.5 A
I
f
= 3.5 A, Tc = 125 °C
I
f
= 7 A ,V
R
= 35 V,
Tc=125°C, di/dt = 100A/
μ
s
Min.
Typ.
Max.
1.9
Unit
1.4
1.15
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
50
70
2.7
ns
nC
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGP7NB60K_07 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT |
| STGP7NB60KD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP7NB60KDFP | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
| STGP7NB60KFP | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP7NB60M | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-CHANNEL 7A - 600V TO-220/DPAK POWERMESH IGBT |
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