參數(shù)資料
型號: STGF20NB60S
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT
中文描述: N溝道13A條- 600V到- 220FP PowerMESH IGBT的
文件頁數(shù): 10/10頁
文件大?。?/td> 293K
代理商: STGF20NB60S
STGF20NB60S
10/10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGF20NB60S_0508 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 13A - 600V TO-220FP PowerMESH TM IGBT
STGF30H60DF 制造商:STMicroelectronics 功能描述:Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-220FP Tube 制造商:STMicroelectronics 功能描述:IGBT & POWER BIPOLAR - Rail/Tube 制造商:STMicroelectronics 功能描述:IGBT 600V 34A 31W TO220FP 制造商:STMicroelectronics 功能描述:600V 30A High Speed Trench Gate IGBT
STGF30NC60S 功能描述:IGBT 晶體管 30 A 600V FAST IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGF35HF60W 功能描述:IGBT 晶體管 35A 600V Ultrafast IGBT over 100kHz OP RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGF3NB60FD 功能描述:IGBT N-CHANNEL 600V 3A TO-220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:PowerMESH™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件