參數(shù)資料
型號(hào): STGD3NB60SD
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 3A - 600V DPAK Power MESH IGBT
中文描述: N溝道3A條- 600V的IGBT的DPAK封裝電力網(wǎng)格
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 322K
代理商: STGD3NB60SD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGD3NB60SD_04 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT
STGD3NB60SD-1 功能描述:IGBT 晶體管 N Ch 3A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD3NB60SDT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD3NB60ST4 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 3A - 600V DPAK Power MESH IGBT
STGD4M65DF2 功能描述:IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK 制造商:stmicroelectronics 系列:M 包裝:剪切帶(CT) 零件狀態(tài):在售 IGBT 類(lèi)型:溝槽型場(chǎng)截止 電壓 - 集射極擊穿(最大值):650V 電流 - 集電極(Ic)(最大值):8A 脈沖電流 - 集電極 (Icm):16A 不同?Vge,Ic 時(shí)的?Vce(on):2.1V @ 15V,4A 功率 - 最大值:68W 開(kāi)關(guān)能量:40μJ(開(kāi)),136μJ(關(guān)) 輸入類(lèi)型:標(biāo)準(zhǔn) 柵極電荷:15.2nC 25°C 時(shí) Td(開(kāi)/關(guān))值:12ns/86ns 測(cè)試條件:400V,4A,47 歐姆,15V 反向恢復(fù)時(shí)間(trr):133ns 工作溫度:-55°C ~ 175°C(TJ) 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-252-3,DPak(2 引線(xiàn)+接片),SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1