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參數(shù)資料
| 型號(hào)： | STGD3NB60S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 3A - 600V DPAK Power MESH IGBT |
| 中文描述： | N溝道3A條- 600V的IGBT的DPAK封裝電力網(wǎng)格 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | STGD3NB60S |
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STGD3NB60S
8/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGD5NB120SZ-1 | 40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor |
| STGD5NB120SZ | N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT |
| STGD5NB120SZT4 | N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT |
| STGD7NB60FT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:MS-013; Reel Quantity:1500; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA |
| STGD7NB60F | N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD3NB60SD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT |
| STGD3NB60SD_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT |
| STGD3NB60SD-1 | 功能描述:IGBT 晶體管 N Ch 3A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD3NB60SDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD3NB60ST4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V DPAK Power MESH IGBT |
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