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參數(shù)資料
| 型號(hào)： | STGB7NB60KD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道第7A - 600V的- IGBT的TO-220/FP/DPAK/D2PAK PowerMESH⑩ |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 322K |
| 代理商： | STGB7NB60KD |
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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STGB7NB60HD
8/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGB7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGB7NC60HDT4 | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGF7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGP7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGD3NB60SDT4 | N-CHANNEL 3A - 600V DPAK POWERMESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGB7NB60KDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB7NB60KT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| STGB7NB60MDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB7NC60HD | 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 25A D2PAK |
| STGB7NC60HDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 14 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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