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參數(shù)資料
| 型號(hào)： | STGB7NB60HDT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF RoHS Compliant: No |
| 中文描述： | N溝道第7A - 600V的-采用D2PAK POWERMESH IGBT的 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 322K |
| 代理商： | STGB7NB60HDT4 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
off
(**)
E
ts
(
H
)
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
off
(**)
E
ts
(
H
)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V I
C
= 7 A
R
GE
= 10
V
GE
= 15 V
85
20
75
70
85
235
ns
ns
ns
ns
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V I
C
= 7 A
R
GE
= 10
V
GE
= 15 V
T
j
= 125
o
C
150
50
110
110
220
405
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
7
56
A
A
V
f
Forward On-Voltage
I
f
= 7 A
I
f
= 7 A T
j
= 125
o
C
I
f
= 7 A V
R
=200 V
dI/dt = 100 A/
μ
S T
j
= 125
o
C
1.6
1.4
2.0
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(
) Pulse width limited by max. junction temperature
(
H
) Include recovery losses on the STTA506 freewheeling diode
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
100
180
3.6
ns
nC
A
Thermal Impedance
STGB7NB60HD
3/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGB7NB60HD | N-CHANNEL 7A - 600V DPAK PowerMESH IGBT |
| STGB7NB60KD | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGB7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGB7NC60HDT4 | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| STGF7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGB7NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH⑩ IGBT |
| STGB7NB60KDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB7NB60KT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| STGB7NB60MDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB7NC60HD | 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 25A D2PAK |
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