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參數(shù)資料
| 型號： | STE48NM60 |
| 英文描述： | N-CHANNEL 600V 0.09 OHM 48A ISOTOP MDMESH POWER MOSFET |
| 中文描述： | N溝道600V的0.09歐姆第48A 1000V的集電極MDMesh功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 273K |
| 代理商： | STE48NM60 |
3/8
STE48NM50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 250V, I
D
= 24 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 400 V, I
D
= 48 A,
V
GS
= 10 V
Min.
Typ.
Max.
Unit
40
ns
t
r
Rise Time
35
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
87
117
nC
Gate-Source Charge
23
nC
Gate-Drain Charge
42
nC
Parameter
Test Conditions
V
DD
= 400 V, I
D
= 48 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
18
ns
Fall Time
23
ns
Cross-over Time
44
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
48
A
Source-drain Current (pulsed)
192
A
Forward On Voltage
I
SD
= 48 A, V
GS
= 0
I
SD
= 40 A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
520
7.8
30
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
680
11.2
33
ns
μC
A
Thermal Impedence
Safe Operating Area
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