參數(shù)資料
型號(hào): STE48NM60
英文描述: N-CHANNEL 600V 0.09 OHM 48A ISOTOP MDMESH POWER MOSFET
中文描述: N溝道600V的0.09歐姆第48A 1000V的集電極MDMesh功率MOSFET
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 273K
代理商: STE48NM60
STE48NM50
2/8
THERMAL DATA
Rthj-case
Rthc-sink (*)
(*) with conductive GREASE Applies
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Thermal Resistance Junction-case Max
Thermal Resistance Case-sink Typ
0.28
0.05
°C/W
°C/W
Parameter
Max Value
15
Unit
A
810
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
500
Typ.
Max.
Unit
V
V
DS
= Max Rating
10
μA
100
μA
V
GS
= ± 30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 24A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
0.08
0.1
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 24A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
20
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
3700
pF
Output Capacitance
610
pF
Reverse Transfer
Capacitance
Gate Input Resistance
50
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.7
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