- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382558 > STE250NS10 (意法半導(dǎo)體) N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | STE250NS10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET |
| 中文描述： | N溝道100V的- 0.0045糯- 220A條1000V的集電極STripFET功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 297K |
| 代理商： | STE250NS10 |
3/8
STE250NS10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 125 A
V
GS
= 10 V
110
380
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 50V I
D
= 220A V
GS
= 10V
900
160
330
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 125 A
V
GS
= 10 V
1100
330
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 80 V
R
G
= 4.7
,
(Inductive Load, Figure 5)
I
D
= 220 A
V
GS
= 10 V
950
330
600
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
220
880
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 220 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 220 A
V
DD
= 30 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
200
1.35
13.5
ns
μ
C
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STE250N06 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
| STE26N50 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
| STE40NC60 | N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET |
| STE40NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STE45NK80ZD | N-CHANNEL 800V - 0.11ohm - 45 A ISOTOP Super FREDMesh MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STE250NS10 | 制造商:STMicroelectronics 功能描述:MOSFET |
| STE250NS10_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.0045ヘ - 220A - ISOTOP STripFET⑩ Power MOSFET |
| STE250S | 制造商:Thomas & Betts 功能描述:STAR TECK EXTREME 2 1/2 STEEL |
| STE26N50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
| STE26NA90 | 功能描述:MOSFET N-CH 900V 26A ISOTOP RoHS:否 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。