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參數(shù)資料
| 型號： | STE15NA100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式功率MOS晶體管) |
| 中文描述： | N溝道增強(qiáng)模式快速功率MOS晶體管（不適用溝道增強(qiáng)模式功率馬鞍山晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 79K |
| 代理商： | STE15NA100 |
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.27
0.05
o
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
TBD
A
E
AS
TBD
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 500
μ
A V
GS
= 0
1000
V
I
DSS
V
DS
= Max Rating
V
DS
=0.8x Max Rating T
c
= 125
o
C
250
1000
±
200
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
DS
= V
GS
I
D
= 1mA
2.25
3
3.75
V
R
DS(on)
V
GS
= 10V I
D
= 7.5 A
0.65
0.77
I
D(on)
V
GS
= 10 V
15
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 7.5 A
12
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1.0 MHz V
GS
= 0
7
600
150
9.1
780
195
nF
pF
pF
STE15NA100
2/5
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