參數(shù)資料
型號: STD2NB80
廠商: 意法半導體
英文描述: N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
中文描述: ? -頻道800V的- 4.6歐姆- 1.9A -像是iPak / MOSFET的DPAK封裝PowerMESH
文件頁數(shù): 3/9頁
文件大?。?/td> 92K
代理商: STD2NB80
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay Time
Rise Time
V
DD
= 400 V
R
G
= 4.7
(see test circuit, figure 3)
V
DD
= 640 V
I
D
= 1.5 A
V
GS
= 10 V
12
10
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
=3 A V
GS
= 10 V
17
6.5
7.5
24
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
R
G
= 4.7
(see test circuit, figure 5)
I
D
= 3 A
V
GS
= 10 V
15
17
22
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
1.9
7.6
A
A
V
SD
(
)
t
rr
I
SD
= 1.9 A
V
GS
= 0
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2.6 A
V
DD
= 100 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
650
2.8
8.5
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area
Thermal Impedance
STD2NB80
3/9
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STD2NB80T4 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2NC40 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC40-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC45-1 功能描述:MOSFET N-Ch, 450V-4.1ohms 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube