參數(shù)資料
型號(hào): STD2NA60
廠商: 意法半導(dǎo)體
英文描述: Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:20mm; Operating Temp. Max:70 C RoHS Compliant: Yes
中文描述: ? -通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 172K
代理商: STD2NA60
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
R
G
= 18
(see test circuit, figure 3)
V
DD
= 400 V
R
G
= 18
(see test circuit, figure 5)
V
DD
= 480 V
I
D
= 1.5 A
V
GS
= 10 V
14
25
20
35
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 3 A
V
GS
= 10 V
300
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 3 A
V
GS
= 10 V
22
6
9
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
R
G
= 18
(see test circuit, figure 5)
I
D
= 3 A
V
GS
= 10 V
13
24
12
18
34
17
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
2.3
9.2
A
A
V
SD
(
)
t
rr
I
SD
= 2.3 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3 A
V
DD
= 100 V
(see test circuit, figure 5)
460
5.6
24
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD2NA60
3/10
相關(guān)PDF資料
PDF描述
STD2NB80T4 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA
STD2NB80 N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
STD2NC40 N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC40-1 N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC45-1 N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD2NA60-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-251
STD2NA60T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-252
STD2NB25 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET
STD2NB25-1 功能描述:MOSFET N-CH 250V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2NB25T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2A I(D) | TO-252AA