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參數(shù)資料
| 型號(hào)： | STD2NA50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Supercapacitor; Capacitance:0.047F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:120ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | STD2NA50 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Time
Rise Time
V
DD
= 250 V I
D
= 1.1 A
R
G
= 4.7
V
GS
= 10 V
V
DD
= 400 V I
D
= 2.2 A
R
G
= 47
V
GS
= 10 V
V
DD
= 400 V I
D
=2.2 A V
GS
= 10 V
7
8
10
11
ns
ns
A/
μ
s
Turn-on Current Slope
350
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
5.5
7
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V I
D
= 2.2 A
R
G
= 4.7
V
GS
= 10 V
7
7
14
10
10
20
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
2.2
8.8
A
A
V
SD
(
)
t
rr
I
SD
= 2.2 A V
GS
= 0
I
SD
= 2.2 A di/dt = 100 A/
μ
s
V
DD
= 100 V T
j
= 150
o
C
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
380
4.4
23
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STD2NA50
3/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD2NA60 | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:20mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| STD2NB80T4 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA |
| STD2NB80 | N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET |
| STD2NC40 | N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC40-1 | N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD2NA50-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-251 |
| STD2NA50T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
| STD2NA60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD2NA60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-251 |
| STD2NA60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-252 |
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