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參數(shù)資料
| 型號： | STD2NA50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Supercapacitor; Capacitance:0.047F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:120ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| 中文描述： | ? -通道增強型功率MOS器件 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 98K |
| 代理商： | STD2NA50 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.78
100
1
275
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
2.2
A
E
AS
25
mJ
E
AR
1
mJ
I
AR
1.4
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A V
GS
= 0
500
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 T
c
= 125
o
C
V
GS
=
±
30 V
250
1000
μ
A
μ
A
I
GSS
Gate-Source Leakage
Current (V
DS
= 0)
100
mA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS ID
= 250
μ
A
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 1.1 A T
c
= 100
o
C
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
2.25
3
3.75
V
A
V
GS
= 10 V I
D
= 1.1 A
3.25
4
8
I
D(on)
2.2
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.1 A
0.7
1.9
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
300
55
15
400
70
20
pF
pF
pF
STD2NA50
2/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD2NA60 | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:20mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| STD2NB80T4 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA |
| STD2NB80 | N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET |
| STD2NC40 | N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC40-1 | N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD2NA50-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-251 |
| STD2NA50T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
| STD2NA60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD2NA60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-251 |
| STD2NA60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-252 |
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