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參數(shù)資料
| 型號(hào)： | STD17N06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 180K |
| 代理商： | STD17N06 |
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication aresubject to change withoutnotice. Thispublication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for use ascriticalcomponents in lifesupport devices or systems withoutexpress
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STD17N05/STD17N06
10/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD17N05-1 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-251 |
| STD17N05L-1 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-251AA |
| STD17N05LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252AA |
| STD17N05T4 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252 |
| STD17N06-1 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD17N06-1 | 功能描述:MOSFET DISC BY STM 4/01 TO-251 N-CH 60V 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD17N06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
| STD17N06L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-251AA |
| STD17N06LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-252AA |
| STD17N06T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-252 |
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