參數(shù)資料
型號： STB9NK70ZFP
廠商： 意法半導體
英文描述： N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
中文描述： N溝道高達700V - 1ohm - 7.5A的TO-220/FP/D2PAK/I2PAK/TO-247齊保護的SuperMESH⑩功率MOSFET
文件頁數(shù)： 2/14頁
文件大小： 666K
代理商： STB9NK70ZFP
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤
7.5A, di/dt
≤
200
μ
A, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Parameter
Value
Unit
TO-220 /
D
2
PAK / I
2
PAK
TO-220FP
TO-247
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
700
V
700
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
7.5
7.5 (*)
7.5
A
4.7
4.7 (*)
4.7
A
Drain Current (pulsed)
30
30 (*)
30
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
115
35
156
W
0.92
0.28
1.25
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
I
2
PAK
D
2
PAK
TO-220FP
TO-247
Rthj-case
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
1.09
3.6
0.8
°C/W
Rthj-pcb
30
°C/W
Rthj-amb
T
l
62.5
30
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
7.5
Unit
A
230
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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