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參數(shù)資料
| 型號： | STB9NK70ZFP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道高達(dá)700V - 1ohm - 7.5A的TO-220/FP/D2PAK/I2PAK/TO-247齊保護(hù)的SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 666K |
| 代理商： | STB9NK70ZFP |
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
14/14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB9NK70ZT4 | 功能描述:MOSFET N-Ch 700 Volt 7.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB9NK80Z | 功能描述:MOSFET N-CH 800V D2PAK 制造商:stmicroelectronics 系列:SuperMESH?? 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:800V 電流 - 連續(xù)漏極（Id）（25°C 時）:5.2A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:1.8 歐姆 @ 2.6A，10V 不同 Id 時的 Vgs（th）（最大值）:4.5V @ 100μA 不同 Vgs 時的柵極電荷（Qg）:40nC @ 10V 不同 Vds 時的輸入電容（Ciss）:1138pF @ 25V 功率 - 最大值:125W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應(yīng)商器件封裝:D2PAK 標(biāo)準(zhǔn)包裝:1 |
| STB9NK90Z | 功能描述:MOSFET N Ch 900V 1.1 8A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB9NK90Z_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH? Power MOSFET |
| STBA1000101 | 制造商:Seagate Technology 功能描述:- Bulk |
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