參數(shù)資料
型號(hào)： STB8NC70ZT4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
中文描述： N溝道700V的0.90歐姆6.8A TO-220/TO-220FP/D2PAK/I2PAK穩(wěn)壓保護(hù)POWERMESH三MOSFET的
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 532K
代理商： STB8NC70ZT4
3/13
STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
Gate-Source Breakdown
Voltage
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Test Conditions
V
DD
= 350 V, I
D
= 37.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 560V, I
D
= 7.5 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
30
ns
t
r
Rise Time
10
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
55
77
nC
Gate-Source Charge
14
nC
Gate-Drain Charge
21
nC
Parameter
Test Conditions
V
DD
= 560V, I
D
= 7.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
15
ns
Fall Time
12
ns
Cross-over Time
20
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
6.8
A
Source-drain Current (pulsed)
27
A
Forward On Voltage
I
SD
= 6.8 A, V
GS
= 0
I
SD
= 7.5 A, di/dt = 100A/μs,
V
DD
= 30V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
680
ns
Reverse Recovery Charge
7.1
μC
Reverse Recovery Current
21
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Igs=± 1mA (Open Drain)
25
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
D
= 50 mA,
90
相關(guān)PDF資料
PDF描述
STB8NC70Z-1 N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STB9NK60ZFP N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB9NK70ZFP N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STBR606 50-60Hz RECTIFICATION BRIDGE
STBR608 50-60Hz RECTIFICATION BRIDGE
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