參數資料
型號: STB8NC50
廠商: 意法半導體
英文描述: N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩II MOSFET
中文描述: N溝道500V - 0.7ohm - 8A條采用D2PAK PowerMesh第二MOSFET的⑩
文件頁數: 3/9頁
文件大?。?/td> 441K
代理商: STB8NC50
3/9
STB8NC50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 250V, I
D
= 4A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 8A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
19
ns
t
r
Rise Time
14
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
36
45
nC
Gate-Source Charge
5
nC
Gate-Drain Charge
18.2
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 8A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
13
ns
Fall Time
15
ns
Cross-over Time
26
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
8
A
Source-drain Current (pulsed)
32
A
Forward On Voltage
I
SD
= 8A, V
GS
= 0
1.6
V
Reverse Recovery Time
I
SD
= 8A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
470
ns
Reverse Recovery Charge
3.2
μC
Reverse Recovery Current
13.7
A
Safe Operating Area
Thermal Impedance
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