參數(shù)資料
型號： STB8NC50
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩II MOSFET
中文描述： N溝道500V - 0.7ohm - 8A條采用D2PAK PowerMesh第二MOSFET的⑩
文件頁數(shù)： 2/9頁
文件大?。?/td> 441K
代理商： STB8NC50
STB8NC50
2/9
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
DYNAMIC
Symbol
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.93
62.5
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
Unit
I
AR
8
A
E
AS
600
mJ
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
I
D
= 250 μA, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
1
μA
50
μA
I
GSS
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 4 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
0.7
0.85
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
7.5
S
C
iss
C
oss
Input Capacitance
1050
pF
Output Capacitance
165
pF
C
rss
Reverse Transfer
Capacitance
25
pF
相關(guān)PDF資料
PDF描述
STB8NC70ZT4 N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
STB8NC70Z-1 N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STB9NK60ZFP N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB9NK70ZFP N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STBR606 50-60Hz RECTIFICATION BRIDGE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB8NC50-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET
STB8NC50T4 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB8NC70Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STB8NC70Z-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STB8NC70ZT4 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
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