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參數(shù)資料
| 型號： | STB7NC80ZT4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 800V - 1.3 OHM - 6.5A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
| 中文描述： | N溝道800V的- 1.3歐姆- 6.5A TO-220/TO-220FP/D2PAK/I2PAK穩(wěn)壓保護POWERMESH三MOSFET的 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 542K |
| 代理商： | STB7NC80ZT4 |
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP7NC80Z
STB7NC80Z
STB7NC80Z-1
STP7NC80ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
±25
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
6.5
6.5 (*)
A
4
4(*)
A
Drain Current (pulsed)
26
26 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
135
40
W
1.08
0.32
W/°C
I
GS
Gate-source Current
±50
mA
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
3
KV
3
V/ns
Insulation Withstand Voltage (DC)
--
2000
V
Storage Temperature
-65 to 150
°C
Max.Operating Junction Temperature
150
°C
TO-220 / D
2
PAK /
I
2
PAK
0.93
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.13
°C/W
°C/W
°C
30
300
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
6.5
Unit
A
290
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
25
Typ.
Max.
Unit
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
D
= 20 mA,
90
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| STB80N20M5 | 功能描述:MOSFET N-Ch 200V 0.019 61A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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