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參數(shù)資料
| 型號(hào)： | STB4NB80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道800V的-3Ω- 4A條，TO-220/TO-220FP PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 53K |
| 代理商： | STB4NB80 |
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STB4NB80
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| STB4NC60 | INTEGRATED EC000 MPU |
| STB4NC60-1 | INTEGRATED EC000 MPU |
| STB4NC60A-1 | 32BIT MCU,GPT,SIM,QSM |
| STB4NC80ZT4 | N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB4NB80-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-262AA |
| STB4NB80FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET |
| STB4NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB4NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩II MOSFET |
| STB4NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET |
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